Simulation of quality of SiC/Si interface during MBE deposition of C on Si

被引：8
作者：
Kulikov, D. V.
Schmidt, A. A.
Korolev, S. A.
Morales, F. M.
Stauden, Th.
Trushin, Yu. V.
Pezoldt, J.
机构：
[1] Tech Univ Ilmenau, Ctr Micro & Nanotechnol, D-98684 Ilmenau, Germany
[2] Russian Acad Sci, Inst Res & Educ, St Petersburg Physicotech Ctr Res & Educ, Moscow 117901, Russia
[3] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[4] St Petersburg State Tech Univ, St Petersburg 195251, Russia
[5] Univ Cadiz, Fac Ciencias, Dept Ciencia Mat & Ingn Met & Quim Inorgan, Puerto Real 11510, Cadiz, Spain
来源：
MATERIALWISSENSCHAFT UND WERKSTOFFTECHNIK | 2006年 / 37卷 / 11期
关键词：
silicon carbide; nanoislands; voids; rate equations; Monte Carlo;
D O I：
10.1002/mawe.200600080
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In the present paper we simulate the processes accompanying the SiC/Si epitaxial growth. The model suggested describes the formation and growth of voids at SiC/Si interface. These voids are sources of Si atoms for SiC growth. According to the model the size distribution function was obtained being in good agreement with experimental data. The influence of surfactants on the nucleation and growth of SiC nanoislands on Si was studied as well.
引用
收藏
页码：929 / 932
页数：4
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