First-principles calculation of phonon-limited mobility in planar T graphene

被引：5
|
作者：
Li, Dongxu [1 ]
Jiang, Liwei [1 ]
Zhu, Mingfeng [1 ]
Zheng, Yisong [1 ]
机构：
[1] Jilin Univ, Coll Phys, Key Lab Phys & Technol Adv Batteries, Minist Educ, Changchun 130012, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2020年 / 322卷 / 322期
基金：
中国国家自然科学基金;
关键词：
Planar T graphene; Mobility; Electron-phonon coupling; First-principles calculation; RESISTIVITY;
D O I：
10.1016/j.ssc.2020.114064
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We present the phonon-limited electron mobility in planar.. graphene and find that the mobility proportional to T-5.53 at low temperature T. With the increase of temperature, the power exponent 5.53 decreases towards 1. Excitingly, the room-temperature mobility of planar T graphene is 2.78 x 10(6) cm(2)/Vs which is about 20.59 times as large as that of T-type graphene at the same carrier density. Different from graphene with longitudinal acoustic phonon dominating the mobility, an in-plane optical phonon mode contributes the most to the mobility of planar T graphene.
引用
收藏
页数：5
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