First-principles calculation of phonon-limited mobility in planar T graphene

被引：5

作者：

Li, Dongxu ^{[1
]}

Jiang, Liwei ^{[1
]}

Zhu, Mingfeng ^{[1
]}

Zheng, Yisong ^{[1
]}

机构：

[1] Jilin Univ, Coll Phys, Key Lab Phys & Technol Adv Batteries, Minist Educ, Changchun 130012, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2020年 / 322卷 / 322期

基金：

中国国家自然科学基金;

关键词：

Planar T graphene; Mobility; Electron-phonon coupling; First-principles calculation; RESISTIVITY;

D O I：

10.1016/j.ssc.2020.114064

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present the phonon-limited electron mobility in planar.. graphene and find that the mobility proportional to T-5.53 at low temperature T. With the increase of temperature, the power exponent 5.53 decreases towards 1. Excitingly, the room-temperature mobility of planar T graphene is 2.78 x 10(6) cm(2)/Vs which is about 20.59 times as large as that of T-type graphene at the same carrier density. Different from graphene with longitudinal acoustic phonon dominating the mobility, an in-plane optical phonon mode contributes the most to the mobility of planar T graphene.

引用

页数：5

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