The elastic strain and composition of self-assembled GeSi islands on Si(001)

被引：12
|
作者：
Krasil'nik, ZF
Dolgov, IV
Drozdov, YN
Filatov, DO
Gusev, SA
Lobanov, DN
Moldavskaya, LD
Novikov, AV
Postnikov, VV
Vostokov, NV
机构：
[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia
[2] Nizhny Novgorod State Univ, Nizhnii Novgorod, Russia
来源：
THIN SOLID FILMS | 2000年 / 367卷 / 1-2期
基金：
俄罗斯基础研究基金会;
关键词：
molecular beam epitaxial growth of GeSi nanoislands; hut-clusters and dome-islands; atomic-force microscopy; X-ray diffraction; Raman spectroscopy;
D O I：
10.1016/S0040-6090(00)00683-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The paper presents the results of investigation of self-assembled GeSi islands growth on Si (001) at 700 degrees C and the evolution of Ge islands parameters during annealing. The islands with the narrow (standerd deviation similar to 6%) lateral size and height distributions were grown. Dissolution of Si in islands was revealed from the Raman scattering and the X-ray diffraction measurements. Both the alloy composition and the elastic strain in the islands were determined. It was found that the content of Si in islands increased during annealing. This increase was shown to result in changes of the shape and sizes of islands. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：171 / 175
页数：5
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