A Compact 12-Watt High-Efficiency 2.1-2.7 GHz Class-E GaN HEMT Power Amplifier for Base Stations

被引：41
作者：
van der Heijden, Mark P. [1 ]
Acar, Mustafa [1 ]
Vromans, Jan S. [1 ]
机构：
[1] Corp I&T, NXP Semicond, Res, NL-5656 AE Eindhoven, Netherlands
来源：
2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3 | 2009年
关键词：
Base station; broadband; class-E; gallium nitride (GaN); high electron mobility transistor (HEMT); power-added efficiency (PAE); power amplifier (PA); RF circuit design;
D O I：
10.1109/MWSYM.2009.5165782
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A compact broadband class-E power amplifier design is presented. High broadband power efficiency is observed from 2.0-2.5 GHz, where drain efficiency >74% and PAE >71%, when using 2(nd)-harmonic input tuning. The highest in-band efficiency performance is observed at 2.14 GHz from a 40V supply with peak drain-efficiency of 77.3% and peak PAE of 74.0% at 12W output power and 14dB gain. The best broadband output power performance is observed from 2.1-2.7 GHz without 2(nd)-harmonic input tuning, where the output power variation is within 1.5dB and power efficiency is between 53% and 66%.
引用
收藏
页码：657 / 660
页数：4
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