Effect of In incorporation on optical properties of amorphous Se-Ge thin films

被引：22

作者：

Pandey, V.

Tripathi, S. K.

Kumar, A. ^{[1
]}

机构：

[1] Harcourt Butler Technol Inst, Dept Phys, Kanpur 208002, Uttar Pradesh, India

[2] Panjab Univ, Dept Phys, Chandigarh 160014, India

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 388卷 / 1-2期

关键词：

chalcogenide glasses; amorphous semiconductor; optical properties and optical band gap;

D O I：

10.1016/j.physb.2006.05.427

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Measurements of optical properties have been made on alloyed samples of Se and Ge with In prepared under vacuum by quenching the melt into water. The optical transmission spectra of film Se90Ge10-xInx (x = 2, 4 and 6) were measured in the wavelength range 400-2000 nm by spectrophotometer. It is observed from optical transmission measurements that optical energy gap (E-g) decreases with In content. It is also found that refractive index (n), real dielectric constant (epsilon') decreases with wavelength (lambda) while extinction coefficient (k), imaginary dielectric constant (epsilon) increases with wavelength (lambda). The absorption coefficient (alpha) increases with photon energy (h nu). (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：200 / 205

页数：6

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