Synchrotron X-ray topography of bismuth silicon oxide crystals

被引：3

作者：

MartinezLopez, J

GonzalezManas, M

Caballero, MA

Dieguez, E

Capelle, B

机构：

[1] UNIV AUTONOMA MADRID,DEPT FIS MAT,E-28049 MADRID,SPAIN

[2] UNIV PARIS 06,LAB MINERAL CRISTALLOG,F-75252 PARIS 05,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 166卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(96)00107-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The generation and distribution of growth defects in Czochralski-grown bismuth silicon oxide (Bi12SiO20) crystals have been studied by synchrotron X-ray topography. The relationship of the paths of grown-in dislocations with the shape of the crystal-melt interface is also reported.

引用

页码：325 / 328

页数：4

共 6 条

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