Multilevel storage in phase-change memory

被引：3
|
作者：
Hong, Yang [1 ]
Lin, Yinyin
Tan, Ting-Ao
Chen, Bomy
机构：
[1] Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[2] SST Inc, Sunnyvale, CA 94086 USA
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2007年 / E90C卷 / 03期
关键词：
ITIR; 2T2R; PCM; multilevel storage; one-dimensional ratio space; ECC;
D O I：
10.1093/ietele/e90-c.3.634
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel ratio-oriented definition based on 2T2R (Two transistors & two phase change resistors) phase change memory (PCM) cell structure is proposed to gain a high density by multilevel storage. In this novel solution, no reference is needed and good robustness remains still as conventional 2T2R, which is crucial when feature size scales to nanometer technology node. A behavioral SPICE model together with a preliminary simulation proves the idea to be feasible, and further optimization has been carried out. In addition, based on the ratio-oriented definition, a simpler and faster Error Control Coding (ECC) can be realized with n-Error-detection feasible.
引用
收藏
页码：634 / 640
页数：7
相关论文
共 50 条
  • [1] Multilevel storage in lateral phase-change memory by promotion of nanocrystallization
    Yin, You
    Hosaka, Sumio
    MICROELECTRONIC ENGINEERING, 2011, 88 (08) : 2794 - 2796
  • [2] Multilevel storage in lateral top-heater phase-change memory
    Yin, You
    Ota, Kazuhiro
    Higano, Naoya
    Sone, Hayato
    Hosaka, Sumio
    IEEE ELECTRON DEVICE LETTERS, 2008, 29 (08) : 876 - 878
  • [3] Programming margin enlargement by material engineering for multilevel storage in phase-change memory
    Yin, You
    Noguchi, Tomoyuki
    Ohno, Hiroki
    Hosaka, Sumio
    APPLIED PHYSICS LETTERS, 2009, 95 (13)
  • [4] Reconfigurable Multilevel Storage and Neuromorphic Computing Based on Multilayer Phase-Change Memory
    Wang, Lu
    Ma, Ge
    Yan, Senhao
    Cheng, Xiaomin
    Miao, Xiangshui
    ACS APPLIED MATERIALS & INTERFACES, 2024, 16 (40) : 54829 - 54836
  • [5] Controllable crystallization in phase-change memory for low-power multilevel storage
    School of Engineering, Gunma University, Kiryu, Gunma 376-8515, Japan
    Jpn. J. Appl. Phys., 6 PART 1
  • [6] Controllable Crystallization in Phase-Change Memory for Low-Power Multilevel Storage
    Yin, You
    Hosaka, Sumio
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (06)
  • [7] Programming Algorithms for Multilevel Phase-Change Memory
    Papandreou, N.
    Pozidis, H.
    Pantazi, A.
    Sebastian, A.
    Breitwisch, M.
    Lam, C.
    Eleftheriou, E.
    2011 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2011, : 329 - 332
  • [8] Analysis of Influencing Factors on Multilevel Storage Performance in Phase-Change Random Access Memory
    Wang, Zhiyu
    Cai, Daolin
    ELECTRONICS, 2024, 13 (19)
  • [9] Effect of a separate heater structure for crystallisation to enable multilevel storage phase-change memory
    Alip, Rosalena Irma
    Mohamad, Zulfakri
    Yin, You
    Hosaka, Sumio
    INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 2014, 11 (5-8) : 389 - 395
  • [10] A Novel Phase-Change Memory with a Separate Heater Characterized by Constant Resistance for Multilevel Storage
    Alip, Rosalena Irma
    Kobayashi, Ryota
    Zhang, Yu Long
    Mohamad, Zulfakri
    Yin, You
    Hosaka, Sumio
    ADVANCED MICRO-DEVICE ENGINEERING III, 2013, 534 : 136 - 140
12345