ESOMAT 2009 - 8TH EUROPEAN SYMPOSIUM ON MARTENSITIC TRANSFORMATIONS
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2009年
关键词:
TRANSFORMATION;
NI2MNGA;
D O I:
10.1051/esomat/200904002
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The magnetic shape memory (MSM) alloy Ni-Mn-Ga is an active material where large strains are obtained by magnetically induced reorientation (MIR) of martensitic variants. For the integration in microsystems, epitaxial thin films are in the centre of interest since the highest strains have only been obtained in single crystals. In order to minimize the technological effort, sputter deposition at low deposition temperatures is favoured. However, for obtaining high degree of order and thus a high Curie temperature, an additional post heat treatment at elevated temperatures is necessary. We report on the consequences of the post annealing process on thin epitaxial Ni-Mn-Ga films. In addition to increasing the Curie temperature, the annealed film shows a secondary Ni-rich Ni-3(Mn, Ga) phase. This phase has a well defined interface to the high temperature austenitic phase of Ni-Mn-Ga. Ni3Ga is formed due to evaporation losses of Mn and Ga. The formation of those precipitates can be avoided by preparing thin Ni-Mn-Ga films directly at elevated temperatures.
机构:
Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R ChinaBeihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
Wang, Jingmin
Jiang, Chengbao
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机构:
Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R ChinaBeihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
Jiang, Chengbao
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机构:
Techapiesancharoenkij, Ratchatee
Bono, David
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机构:
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USABeihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
Bono, David
Allen, Samuel M.
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机构:
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USABeihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
Allen, Samuel M.
O'Handley, Robert C.
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h-index: 0
机构:
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
Ferro Solut Inc, Woburn, MA 01801 USABeihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China