Epitaxial growth of Bi thin films on Ge(111)

被引：39

作者：

Hatta, Shinichiro ^{[1
,2
]}

Ohtsubo, Yoshiyuki ^{[1
]}

Miyamoto, Sanae ^{[1
]}

Okuyama, Hiroshi ^{[1
]}

Aruga, Tetsuya ^{[1
,2
]}

机构：

[1] Kyoto Univ, Grad Sch Sci, Dept Chem, Kyoto 6068502, Japan

[2] JST CREST, Saitama 3320012, Japan

来源：

APPLIED SURFACE SCIENCE | 2009年 / 256卷 / 04期

关键词：

Low-energy electron diffraction; Scanning tunneling microscopy; Thin film growth; Bismuth; Ge(111); ENERGY-ELECTRON-DIFFRACTION; BISMUTH;

D O I：

10.1016/j.apsusc.2009.05.079

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigated Bi thin film growth on Ge(1 1 1) by using low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). In the submonolayer regime, adsorbed Bi atoms form patches of the (2 x 1) structure. However, the structure does not grow to a long-range order. Following the formation of a (1 x 1) monolayer (ML) film, two-dimensional (1 1 0)-orientated Bi islands grow. The film orientation changes from (1 1 0) to (1 1 1) at 6-10 ML. The (1 1 0)-oriented Bi film shows a six-domain LEED pattern with missing spots, associated with a glide-line symmetry. The hexagonal (1 1 1) film at 14 ML has a lattice constant 2% smaller than bulk Bi(1 1 1). (C) 2008 Elsevier B. V. All rights reserved.

引用

页码：1252 / 1256

页数：5

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