High-resolution electron holography for the study of composition and strain in thin film semiconductors

被引：6

作者：

Houdellier, F. ^{[1
]}

Hytch, M. J. ^{[1
]}

Snoeck, E. ^{[1
]}

Casanove, M. J. ^{[1
]}

机构：

[1] CNRS, Ctr Elaborat Mat & Etud Struct, F-31055 Toulouse 4, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2006年 / 135卷 / 03期

关键词：

transmission electron microscopy; electron holography; strain measurement; chemical composition; semiconducting layers; silicon;

D O I：

10.1016/j.mseb.2006.08.035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A method for simultaneous measurement of strain and composition in exactly the same specimen area is proposed using high-resolution electron holography. Results are shown for a strained semiconducting thin films consisting in a Si0.7Ge0.3 layer epitaxially grown on a silicon substrate. Experiments were carried out using an aberration-corrected transmission electron microscope fitted with a field emission gun and electron biprism. We demonstrate the efficiency of the technique for providing accurate information on local chemical composition to 5% and strain to 0.1% at a spatial resolution of 2 nm. The accuracy of the results is discussed as are surface relaxation effects. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：188 / 191

页数：4

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