A Novel Single Event Upset Tolerant 12T Memory Cell for Aerospace Applications

被引：3

作者：

Dohar, Suraj Singh ^{[1
]}

Siddharth, R. K. ^{[1
]}

Vasantha, M. H. ^{[1
]}

Kumar, Nithin Y. B. ^{[1
]}

机构：

[1] Natl Inst Technol Goa, Dept Elect & Commun Engn, Veling, Goa, India

来源：

2020 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI (ISVLSI 2020) | 2020年

关键词：

Radiation-hardened designs; static noise margin (SNM); N-curve metrics; single event upset (SEU); leakage power; SRAM CELLS; DESIGN;

D O I：

10.1109/ISVLSI49217.2020.00019

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper proposes a novel 12T radiation-hardened memory cell (RHMC-12T) for aerospace application. The proposed design consists of quad-nodes, which stores the data. The architecture consists of only two sensitive nodes, which reduces the total sensitive area compared to the existing radiation-hardened memory cells. It can tolerate both "1" to "0" and "0" to "1" upset at any of the sensitive nodes. The proposed architecture is designed in 65-nm CMOS technology at a supply voltage of 1.2 V. The read and write access times of the proposed design are 80.81 ps and 70.19 ps respectively.

引用

页码：48 / 53

页数：6

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