Optimization of surface orientation for high-performance, low-power and robust FinFET SRAM

被引：20

作者：

Gangwal, Saakshi ^{[1
]}

Mukhopadhyay, Saibal ^{[1
]}

Roy, Kaushik ^{[1
]}

机构：

[1] Purdue Univ, Dept Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

PROCEEDINGS OF THE IEEE 2006 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2006年

关键词：

D O I：

10.1109/CICC.2006.321009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We analyze the impact of surface orientation on stability, performance and power of 6-T and 8-T FinFET SRAMs. We show that, in comparison to 32nm 6-T FinFET SRAM cell with devices of (110) orientation, multi-oriented devices with optimized orientation can improve the static noise margin (SNM) by 23-35% and access time (similar to 22-33%), while consuming the same leakage power. For 8-T FinFET SPAM, multi-oriented devices can improve write stability substantially (similar to 17%) with negligible area overhead.

引用

页码：433 / 436

页数：4