Carrier lifetime enhancement in halide perovskite via remote epitaxy

被引：109

作者：

Jiang, Jie ^{[1
,2
]}

Sun, Xin ^{[3
]}

Chen, Xinchun ^{[4
]}

Wang, Baiwei ^{[2
]}

Chen, Zhizhong ^{[2
]}

Hu, Yang ^{[2
]}

Guo, Yuwei ^{[2
]}

Zhang, Lifu ^{[2
]}

Ma, Yuan ^{[5
]}

Gao, Lei ^{[5
]}

Zheng, Fengshan ^{[6
,7
]}

Jin, Lei ^{[6
,7
]}

Chen, Min ^{[8
]}

Ma, Zhiwei ^{[8
]}

Zhou, Yuanyuan ^{[8
]}

Padture, Nitin P. ^{[8
]}

Beach, Kory ^{[3
]}

Terrones, Humberto ^{[3
]}

Shi, Yunfeng ^{[2
]}

Gall, Daniel ^{[2
]}

Lu, Toh-Ming ^{[3
]}

Wertz, Esther ^{[3
]}

Feng, Jing ^{[1
]}

Shi, Jian ^{[2
,9
]}

机构：

[1] Kunming Univ Sci & Technol, Dept Mat Sci & Engn, Kunming 650093, Yunnan, Peoples R China

[2] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA

[3] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[4] Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China

[5] Univ Sci & Technol, Inst Adv Mat & Technol, Beijing Adv Innovat Ctr Mat Genome Engn, Beijing 100083, Peoples R China

[6] Forschungszentrum Julich, Ernst Ruska Ctr Microscopy & Spect Electrons, Julich, Germany

[7] Forschungszentrum Julich, Peter Grunberg Inst, Julich, Germany

[8] Brown Univ, Sch Engn, Providence, RI 02912 USA

[9] Rensselaer Polytech Inst, Ctr Mat Devices & Integrated Syst, Troy, NY 12180 USA

来源：

NATURE COMMUNICATIONS | 2019年 / 10卷 / 1期

基金：

美国国家科学基金会; 中国国家自然科学基金;

关键词：

LIGHT-EMITTING-DIODES; DISLOCATION-DENSITY; DEFECT TOLERANCE; LEAD; RECOMBINATION; GROWTH; MOBILITIES; DYNAMICS; IODIDE; LAYER;

D O I：

10.1038/s41467-019-12056-1

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Crystallographic dislocation has been well-known to be one of the major causes responsible for the unfavorable carrier dynamics in conventional semiconductor devices. Halide perovskite has exhibited promising applications in optoelectronic devices. However, how dislocation impacts its carrier dynamics in the 'defects-tolerant' halide perovskite is largely unknown. Here, via a remote epitaxy approach using polar substrates coated with graphene, we synthesize epitaxial halide perovskite with controlled dislocation density. First-principle calculations and molecular-dynamics simulations reveal weak film-substrate interaction and low density dislocation mechanism in remote epitaxy, respectively. High-resolution transmission electron microscopy, high-resolution atomic force microscopy and Cs-corrected scanning transmission electron microscopy unveil the lattice/atomic and dislocation structure of the remote epitaxial film. The controlling of dislocation density enables the unveiling of the dislocation-carrier dynamic relation in halide perovskite. The study provides an avenue to develop free-standing halide perovskite film with low dislocation density and improved carried dynamics.

引用

页数：12

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