AlGaN single-quantum-well light-emitting diodes with emission at 285 nm

被引：69

作者：

Adivarahan, V ^{[1
]}

Wu, S

Chitnis, A

Pachipulusu, R

Mandavilli, V

Shatalov, M

Zhang, JP

Khan, MA

Tamulaitis, G

Sereika, A

Yilmaz, I

Shur, MS

Gaska, R

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[2] Rensselaer Polytech Inst, Dept ECSE, Troy, NY 12180 USA

[3] Rensselaer Polytech Inst, CIEEM, Troy, NY 12180 USA

[4] Sensor Elect Technol Inc, Latham, NY 12110 USA

[5] Vilnius Univ, IMSAR, Vilnius, Lithuania

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 19期

关键词：

D O I：

10.1063/1.1519100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on AlGaN single-quantum-well light-emitting diodes (LEDs) on sapphire with peak emission at 285 nm. A study is presented to identify the key material parameters controlling the device quantum efficiency. At room temperature, for a 200 mumx200 mum square geometry mesa type device, we obtain a power as high as 0.25 mW for 650 mA pulsed pumping. The LEDs show significantly higher output powers at temperatures below 100 K. (C) 2002 American Institute of Physics.

引用

页码：3666 / 3668

页数：3

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