Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11(2)over-bar2) GaN free standing substrates

被引：96

作者：

Tyagi, Anurag ^{[1
,2
]}

Wu, Feng ^{[1
,2
]}

Young, Erin C. ^{[1
,2
]}

Chakraborty, Arpan ^{[1
,2
]}

Ohta, Hiroaki ^{[1
,2
]}

Bhat, Rajaram ^{[3
]}

Fujito, Kenji ^{[4
]}

DenBaars, Steven P. ^{[1
,2
]}

Nakamura, Shuji ^{[1
,2
]}

Speck, James S. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Corning Inc, Corning, NY 14831 USA

[4] Mitsubishi Chem Corp, Optoelect Lab, Ushiku, Ibaraki 3001295, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 25期

关键词：

SURFACE-MORPHOLOGY; SYSTEM; FILMS;

D O I：

10.1063/1.3275717

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Misfit strain relaxation via misfit dislocation (MD) generation was observed in heteroepitaxially grown (Al,In) GaN layers on free-standing semipolar (11 (2) over bar2) GaN substrates. Cross-section transmission electron microscope images revealed MD arrays at alloy heterointerfaces, with the MD line direction and Burgers vector parallel to [1 (1) over bar 00] and [11 (2) over bar0], respectively. The MD structure is consistent with plastic relaxation by dislocation glide on the (0001) plane. Since (0001) is the only slip plane, the plastic relaxation is associated with tilt of the epitaxial (Al,In) GaN layers. The tilt, measured via high-resolution x-ray diffraction, can be used to quantify the relaxation. (C) 2009 American Institute of Physics. [doi:10.1063/1.3275717]

引用

页数：3

共 18 条

[1] Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups [J].