Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm

被引：34

作者：

Chitnis, A ^{[1
]}

Pachipulusu, R ^{[1
]}

Mandavilli, V ^{[1
]}

Shatalov, M ^{[1
]}

Kuokstis, E ^{[1
]}

Zhang, JP ^{[1
]}

Adivarahan, V ^{[1
]}

Wu, S ^{[1
]}

Simin, G ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 16期

关键词：

D O I：

10.1063/1.1516631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a study of the electrical and optical characteristics of 285 nm emission deep ultraviolet light-emitting diodes (LED) at temperatures from 10 to 300 K. At low bias, our data show the tunneling carrier transport to be the dominant conduction mechanism. The room-temperature performance is shown to be limited mostly by poor electron confinement in the active region and a pronounced deep level assisted recombination but not by the hole injection into the active region. At temperatures below 100 K, the electroluminescence peak intensity increases by more than one order of magnitude indicating that with a proper device design and improved material quality, milliwatt power 285 nm LED are viable. (C) 2002 American Institute of Physics.

引用

页码：2938 / 2940

页数：3

共 10 条

[1] Sub-milliwatt power III-N light emitting diodes at 285 nm [J].

Adivarahan, V ;

Zhang, JP ;

Chitnis, A ;

Shuai, W ;

Sun, J ;

Pachipulusu, R ;

Shatalov, M ;

Khan, MA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (4B) :L435-L436

[2] Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures [J].

Ambacher, O ;

Foutz, B ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Sierakowski, AJ ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Mitchell, A ;

Stutzmann, M .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :334-344

[3]

ASIFKHAN M, 2001, JPN J APPL PHYS PT 2, V40, pL1308

[4] 324 nm light emitting diodes with milliwatt powers [J].

Chitnis, A ;

Zhang, JP ;

Adivarahan, V ;

Shuai, W ;

Sun, J ;

Shatalov, M ;

Yang, JW ;

Simin, G ;

Khan, MA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (4B) :L450-L451

[5] High-quality p-n junctions with quaternary AlInGaN/InGaN quantum wells [J].

Chitnis, A ;

Kumar, A ;

Shatalov, M ;

Adivarahan, V ;

Lunev, A ;

Yang, JW ;

Simin, G ;

Khan, MA ;

Gaska, R ;

Shur, M .

APPLIED PHYSICS LETTERS, 2000, 77 (23) :3800-3802

[6] Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes [J].

Perlin, P ;

Osinski, M ;

Eliseev, PG ;

Smagley, VA ;

Mu, J ;

Banas, M ;

Sartori, P .

APPLIED PHYSICS LETTERS, 1996, 69 (12) :1680-1682

[7] Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing [J].

Polyakov, AY ;

Smirnov, NB ;

Govorkov, AV ;

Kim, J ;

Luo, B ;

Mehandru, R ;

Ren, F ;

Lee, KP ;

Pearton, SJ ;

Osinsky, AV ;

Norris, PE .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (08) :5203-5207

[8] GaN/AlGaN p-channel inverted heterostructure JFET [J].

Shatalov, M ;

Simin, G ;

Zhang, JP ;

Adivarahan, V ;

Koudymov, A ;

Pachipulusu, R ;

Khan, MA .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (08) :452-454

[9] Accumulation hole layer in p-GaN/AlGaN heterostructures [J].

Shur, MS ;

Bykhovski, AD ;

Gaska, R ;

Yang, JW ;

Simin, G ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2000, 76 (21) :3061-3063

[10] Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management [J].

Zhang, JP ;

Wang, HM ;

Gaevski, ME ;

Chen, CQ ;

Fareed, Q ;

Yang, JW ;

Simin, G ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2002, 80 (19) :3542-3544

← 1 →