Quaternary ZnCdSeTe Nanowires

被引:1
作者
Hsiao, C. H. [1 ,2 ]
Chang, S. J. [1 ,2 ]
Wang, S. B. [1 ,2 ]
Chang, S. P. [1 ,2 ]
Cheng, Y. C. [3 ]
Li, T. C. [3 ]
Lin, W. J. [3 ]
Huang, B. R. [4 ]
机构
[1] Natl Cheng Kung Univ, Inst Microelect, Ctr Micro Nano Sci & Technol, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
[3] Chung Shan Inst Sci & Technol, Mat & Electroopt Res Div, Tao Yuan 325, Taiwan
[4] Natl Taiwan Univ Sci & Technol, Grad Inst Electroopt Engn, Dept Elect Engn, Taipei 106, Taiwan
关键词
Quaternary; ZnCdSeTe Nanowires; MBE; OPTICAL-PROPERTIES; ZNSE; PHOTOLUMINESCENCE; EXCITON; BLUE; EPILAYERS;
D O I
10.1166/jnn.2010.1813
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report the growth of needle-like high density quaternary ZnCdSeTe nanowires on oxidized Si(100) substrate using vapor-liquid-solid mechanism by molecular beam epitaxy with an Au-based nanocatalyst. It was found that average length and average diameter of the nanowires were 1.3 mu m and 91 nm, respectively. It was also found that the as-grown ZnCdSeTe nanowires exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. Energy depersive results indicate that composition ratio of our nanowire should be Zn0.87Cd0.13Se0.98Te0.02, which agrees excellently with the designated composition ratio of Zn0.87Cd0.13Se0.98Te0.02.
引用
收藏
页码:798 / 802
页数:5
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