Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure

被引：7

作者：

Drichko, I. L. ^{[1
]}

Diakonov, A. M. ^{[1
]}

Lebedeva, E. V. ^{[1
]}

Smirnov, I. Yu. ^{[1
]}

Mironov, O. A. ^{[2
]}

Kummer, M. ^{[3
,4
]}

von Kaenel, H. ^{[3
,4
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Univ Warwick, Warwich SEMINANO R&D Ctr, Coventry CV4 7EZ, W Midlands, England

[3] ETH, Festkorperphys Lab, CH-8093 Zurich, Switzerland

[4] EpiSpeed SA, CH-8005 Zurich, Switzerland

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 09期

关键词：

2-DIMENSIONAL ELECTRON-GAS; HALL-EFFECT REGIME; CONDUCTIVITY; RELAXATION; SCATTERING; SILICON;

D O I：

10.1063/1.3251568

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurement results of the acoustoelectric effects [surface acoustic waves (SAW) attenuation and velocity] in a high-mobility p-SiGe/Ge/SiGe structure are presented. The structure was low-energy plasma-enhanced chemical vapor deposition grown with a two-dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5-4.2 K) and magnetic field (up to 8.4 T) at different SAW intensities at frequencies 28 and 87 MHz. Shubnikov-de Haas-like oscillations of both SAW attenuation and the velocity change have been observed. Hole density and mobility, effective mass, quantum and transport relaxation times, as well as the Dingle temperature were measured with a method free of electric contacts. The effect of heating of the 2D hole gas by the electric field of the SAW was investigated. Energy relaxation time tau(epsilon) and the deformation potential constant determined. (C) 2009 American Institute of Physics [doi:10.1063/1.3251568]

引用

页数：4

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