A prospective: Quantitative scanning tunneling spectroscopy of semiconductor surfaces

被引：23

作者：

Feenstra, R. M. ^{[1
]}

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

来源：

SURFACE SCIENCE | 2009年 / 603卷 / 18期

基金：

美国国家科学基金会;

关键词：

Scanning tunneling microscopy; ELECTRONIC-STRUCTURE; MICROSCOPY; TIP;

D O I：

10.1016/j.susc.2009.08.002

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Analysis methods that enable quantitative energies of states to be obtained from vacuum tunneling spectra of semiconductors are discussed. The analysis deals with the problem of tip-induced band bending in the semiconductor, which distorts the voltage-scale of the spectra so that it does not correspond directly to energy values. Three-dimensional electrostatic modeling is used to solve the electrostatics of the tip-vacuum-semiconductor system, and an approximate (semiclassical in the radial direction) solution for the wavefunctions is used to obtain the tunnel current. Various applications of the method to semiconductor surfaces and other material systems are discussed, and possible extensions of the method are considered. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2841 / 2844

页数：4

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