Highly-ordered wide bandgap materials for quantized anomalous Hall and magnetoelectric effects

被引:224
作者
Otrokov, M. M. [1 ,2 ,3 ,4 ,5 ]
Menshchikova, T. V. [2 ]
Vergniory, M. G. [1 ,6 ]
Rusinov, I. P. [2 ]
Vyazovskaya, A. Yu [2 ]
Koroteev, Yu M. [2 ,7 ]
Bihlmayer, G. [8 ,9 ,10 ]
Ernst, A. [11 ,12 ]
Echenique, P. M. [1 ,4 ,5 ]
Arnau, A. [1 ,4 ,5 ]
Chulkov, E. V. [1 ,3 ,4 ,5 ]
机构
[1] Donostia Int Phys Ctr, San Sebastian 20018, Spain
[2] Tomsk State Univ, Tomsk 634050, Russia
[3] St Petersburg State Univ, St Petersburg 198504, Russia
[4] Univ Basque Country, Dept Fis Mat, Ctr Fis Mat CFM MPC, San Sebastian 20080, Spain
[5] Univ Basque Country, CSIC, Ctr Mixto, San Sebastian 20080, Spain
[6] Univ Basque Country, UPV EHU, Fac Sci & Technol, Dept Appl Phys 2, Apdo 644, Bilbao 48080, Spain
[7] Russian Acad Sci, Inst Strength Phys & Mat Sci, Tomsk 634021, Russia
[8] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[9] Forschungszentrum Julich, Inst Adv Simulat, D-52425 Julich, Germany
[10] JARA, D-52425 Julich, Germany
[11] Max Planck Inst Mikrostrukturphys, Weinberg 2, D-06120 Halle, Germany
[12] Johannes Kepler Univ Linz, Inst Theoret Phys, A-4040 Linz, Austria
关键词
topological insulator; magnetic insulator; thin films; electronic structure; quantum anomalous Hall effect; topological magnetoelectric effect; density functional theory; TOPOLOGICAL INSULATORS; TRANSITION; FARADAY; STATES; PHASE;
D O I
10.1088/2053-1583/aa6bec
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An interplay of spin-orbit coupling and intrinsic magnetism is known to give rise to the quantum anomalous Hall and topological magnetoelectric effects under certain conditions. Their realization could open access to low power consumption electronics as well as many fundamental phenomena like image magnetic monopoles, Majorana fermions and others. Unfortunately, being realized very recently, these effects are only accessible at extremely low temperatures and the lack of appropriate materials that would enable the temperature increase is a most severe challenge. Here, we propose a novel material platform with unique combination of properties making it perfectly suitable for the realization of both effects at elevated temperatures. The key element of the computational material design is an extension of a topological insulator (TI) surface by a thin film of ferromagnetic insulator, which is both structurally and compositionally compatible with the TI. Following this proposal we suggest a variety of specific systems and discuss their numerous advantages, in particular wide band gaps with the Fermi level located in the gap.
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页数:8
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