Effects of thermal budget in n-type bifacial solar cell fabrication processes on effective lifetime of crystalline silicon

被引:11
作者
Tachibana, Tomihisa [1 ]
Nakamura, Kyotaro [2 ]
Ogura, Atsushi [2 ]
Ohshita, Yoshio [3 ]
Shimoda, Takafumi [4 ]
Masada, Isao [4 ]
Nishijima, Eiichi [4 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Fukushima Renewable Energy Inst, AIST, Koriyama, Fukushima 9630298, Japan
[2] Meiji Univ, Kawasaki, Kanagawa 2148571, Japan
[3] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan
[4] Tokuyama Corp, Yamaguchi 7458648, Japan
来源
AIP ADVANCES | 2017年 / 7卷 / 04期
关键词
OXYGEN PRECIPITATION; EFFICIENCY; QUALITY;
D O I
10.1063/1.4981138
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The effects of residual C on cell properties are investigated from the view point of thermal budget in the n-type bifacial cell processes. Implied V-oc obtained from wafers with same O-i concentration depend on the thermal budgets decreases as the C-s concentration increases. The V-oc values vary depending on the wafer with different growth cooling rate. To analyze the effect of thermal budget correspond to solar cell fabrication process, CZ wafers with almost the same O-i concentrations are prepared. One of the wafers with relatively high residual C-s concentration shows the longer lifetime than the initial value after the 950 degrees C annealing step. On the other hand, the lifetime of a wafer with relatively low C-s concentration dramatically decreased by the same process due to the O segregation. These results suggest that it is important to choose appropriate wafer specification, starting with feedstock material, for increasing the solar cell efficiency. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
引用
收藏
页数:7
相关论文
共 32 条
[1]  
Binns M. J., 2014, ECS Transactions, V60, P1233, DOI 10.1149/06001.1233ecst
[2]   OXYGEN PRECIPITATION IN SILICON [J].
BORGHESI, A ;
PIVAC, B ;
SASSELLA, A ;
STELLA, A .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) :4169-4244
[3]  
Bronsveld P. C. P., 2015, 31 EUR PHOT SOL C EX
[4]   Investigation of laser ablation on boron emitters for n-type rear-junction PERT type silicon wafer solar cells [J].
Chen, Jia ;
Deckers, Jan ;
Choulat, Patrick ;
Kuzma-Filipek, Izabela ;
Aleman, Monica ;
De Castro, Angel Uruena ;
Du, Zhe Ren ;
Duerinckx, Filip ;
Hoex, Bram ;
Szlufcik, Jozef ;
Poortmans, Jef ;
Aberle, Armin G. .
PROGRESS IN PHOTOVOLTAICS, 2015, 23 (12) :1706-1714
[5]   Effect of oxygen precipitation on the performance of Czochralski silicon solar cells [J].
Chen, Lin ;
Yu, Xuegong ;
Chen, Peng ;
Wang, Peng ;
Gu, Xin ;
Lu, Jinggang ;
Yang, Deren .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (11) :3148-3151
[6]   Removing the effect of striations in n-type silicon solar cells [J].
Coletti, G. ;
Manshanden, P. ;
Bernardini, S. ;
Bronsveld, P. C. P. ;
Gutjahr, A. ;
Hu, Z. ;
Li, G. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 130 :647-651
[7]   Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics [J].
Feldmann, Frank ;
Bivour, Martin ;
Reichel, Christian ;
Hermle, Martin ;
Glunz, Stefan W. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 120 :270-274
[8]  
Glunz S.W., 2015, PROC 31 EUROPEAN PHO, P259, DOI 10.4229/EUPVSEC20152015-2BP.1.1
[9]  
Gosele U., 1985, PROMATERIALS RES SOC, V59, P419
[10]   Combinatorial Synthesis Study of Passivation Layers for Solar Cell Applications [J].
Ikeno, N. ;
Tachibana, T. ;
Lee, H. ;
Yoshida, H. ;
Arafune, K. ;
Satoh, S. ;
Chikyow, T. ;
Ogura, A. .
DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV, 2012, 725 :161-+