DX behaviour of Si donors in AlGaN alloys

被引：10

作者：

Brandt, MS ^{[1
]}

Zeisel, R ^{[1
]}

Gönnenwein, STB ^{[1
]}

Bayerl, MW ^{[1
]}

Stutzmann, M ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2003年 / 235卷 / 01期

关键词：

D O I：

10.1002/pssb.200301521

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Recent experiments on the DX behaviour of Si in AlGaN alloys are reviewed. From persistent photoconductivity, light-induced electron spin resonance, and thermal quenching experiments as well as from the thermal activation of the generation-recombination noise, a quantitative configuration coordinate diagram is constructed for pure AlN and Al0.75Ga0.25N. The effects of DX centres on the properties of AlGaN alloys with lower Al concentration are discussed.

引用

页码：13 / 19

页数：7

共 17 条

[11] Stability of deep donor and acceptor centers in GaN, AlN, and BN [J].

Park, CH ;

Chadi, DJ .

PHYSICAL REVIEW B, 1997, 55 (19) :12995-13001

[12] Evidence for localized Si-donor state and its metastable properties in AlGaN [J].

Skierbiszewski, C ;

Suski, T ;

Leszczynski, M ;

Shin, M ;

Skowronski, M ;

Bremser, MD ;

Davis, RF .

APPLIED PHYSICS LETTERS, 1999, 74 (25) :3833-3835

[13] DX-center formation in wurtzite and zinc-blende AlxGa1-xN [J].

Van de Walle, CG .

PHYSICAL REVIEW B, 1998, 57 (04) :R2033-R2036

[14] Pressure induced deep gap state of oxygen in GaN [J].

Wetzel, C ;

Suski, T ;

Ager, JW ;

Weber, ER ;

Haller, EE ;

Fischer, S ;

Meyer, BK ;

Molnar, RJ ;

Perlin, P .

PHYSICAL REVIEW LETTERS, 1997, 78 (20) :3923-3926

[15] DX-behavior of Si in AlN [J].

Zeisel, R ;

Bayerl, MW ;

Goennenwein, STB ;

Dimitrov, R ;

Ambacher, O ;

Brandt, MS ;

Stutzmann, M .

PHYSICAL REVIEW B, 2000, 61 (24) :R16283-R16286

[16]

ZEISEL R, 2001, THESIS TU MUNCHEN

[17] Microscopic origin of the phenomenological equilibrium "doping limit rule'' in n-type III-V semiconductors [J].

Zhang, SB ;

Wei, SH ;

Zunger, A .

PHYSICAL REVIEW LETTERS, 2000, 84 (06) :1232-1235

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