DX behaviour of Si donors in AlGaN alloys

被引：10

作者：

Brandt, MS ^{[1
]}

Zeisel, R ^{[1
]}

Gönnenwein, STB ^{[1
]}

Bayerl, MW ^{[1
]}

Stutzmann, M ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2003年 / 235卷 / 01期

关键词：

D O I：

10.1002/pssb.200301521

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Recent experiments on the DX behaviour of Si in AlGaN alloys are reviewed. From persistent photoconductivity, light-induced electron spin resonance, and thermal quenching experiments as well as from the thermal activation of the generation-recombination noise, a quantitative configuration coordinate diagram is constructed for pure AlN and Al0.75Ga0.25N. The effects of DX centres on the properties of AlGaN alloys with lower Al concentration are discussed.

引用

页码：13 / 19

页数：7

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