Annealing effects on sulfur vacancies and electronic transport of MoS2 films grown by pulsed-laser deposition

被引：25

作者：

Xie, M. Z. ^{[1
]}

Zhou, J. Y. ^{[1
]}

Ji, H. ^{[1
]}

Ye, Y. ^{[1
]}

Wang, X. ^{[1
]}

Jiang, K. ^{[1
]}

Shang, L. Y. ^{[1
]}

Hu, Z. G. ^{[1
,2
,3
]}

Chu, J. H. ^{[1
,2
,3
]}

机构：

[1] East China Normal Univ, Dept Elect Engn, Tech Ctr Multifunct Magnetoopt Spect Shanghai, Shanghai 200241, Peoples R China

[2] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China

[3] Fudan Univ, Shanghai Inst Intelligent Elect & Syst, Shanghai 200433, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2019年 / 115卷 / 12期

基金：

国家重点研发计划;

关键词：

ATOMIC LAYER DEPOSITION; THICKNESS; TEMPERATURE; NETWORKS;

D O I：

10.1063/1.5116174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have synthesized high quality and large area MoS2 films on flexible fluorophlogopite substrates using the pulsed-laser deposition (PLD) technique. Annealing in a sufficient sulfur atmosphere was adopted to eliminate oxide molybdenum and sulfur vacancies introduced during the growth in the vacuum chamber. X-ray photoelectron spectroscopy results demonstrate the advantages benefitted from the annealing process. The S/Mo ratio of the annealed MoS2 film was 1.98:1, which was much closer to the theoretical value. Raman spectroscopy, Photoluminescence spectroscopy, and X-ray diffraction spectroscopy provided direct evidence for the crystallinity improvement. Due to the elimination of molybdenum oxide, the Fermi level was shifted by 0.175 eV, and the conductive type changes from the Ohmic contact to the Schottky contact. The optimized method in this paper makes the PLD-derived MoS2 films promising candidates for microelectronic device application.

引用

页数：5

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