High ε gate dielectrics Gd2O3 and Y2O3 for silicon

被引:250
作者
Kwo, J [1 ]
Hong, M [1 ]
Kortan, AR [1 ]
Queeney, KT [1 ]
Chabal, YJ [1 ]
Mannaerts, JP [1 ]
Boone, T [1 ]
Krajewski, JJ [1 ]
Sergent, AM [1 ]
Rosamilia, JM [1 ]
机构
[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
关键词
D O I
10.1063/1.126899
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on growth and characterization of both epitaxial and amorphous films Gd2O3 of (epsilon=14) and Y2O3 (epsilon=18) as the gate dielectrics for Si prepared by ultrahigh vacuum vapor deposition. The use of vicinal Si (100) substrates is key to the growth of (110) oriented, single-domain films in the Mn2O3 structure. Typical electrical leakage results are 10(-3) A/cm(2) at 1 V for single domain epitaxial Gd2O3 and Y2O3 films with an equivalent SiO2 thickness, t(eq) of 15 Angstrom, and 10(-6) A/cm(2) at 1 V for smooth amorphous Y2O3 films (epsilon=18) with a t(eq) of only 10 Angstrom. For all the Gd2O3 films, the absence of SiO2 segregation at the interface is established from infrared absorption measurements. (C) 2000 American Institute of Physics. [S0003-6951(00)04127-9].
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页码:130 / 132
页数:3
相关论文
共 22 条
[1]   Intermixing at the tantalum oxide/silicon interface in gate dielectric structures [J].
Alers, GB ;
Werder, DJ ;
Chabal, Y ;
Lu, HC ;
Gusev, EP ;
Garfunkel, E ;
Gustafsson, T ;
Urdahl, RS .
APPLIED PHYSICS LETTERS, 1998, 73 (11) :1517-1519
[2]   MOSFET transistors fabricated with high permitivity TiO2 dielectrics [J].
Campbell, SA ;
Gilmer, DC ;
Wang, XC ;
Hsieh, MT ;
Kim, HS ;
Gladfelter, WL ;
Yan, JH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (01) :104-109
[3]   Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer [J].
Choi, SC ;
Cho, MH ;
Whangbo, SW ;
Whang, CN ;
Kang, SB ;
Lee, SI ;
Lee, MY .
APPLIED PHYSICS LETTERS, 1997, 71 (07) :903-905
[4]  
GURVITCH M, 1989, APPL PHYS LETT, V55, P360
[5]   GROWTH OF BUFFER LAYERS ON SI SUBSTRATE FOR HIGH-TC SUPERCONDUCTING THIN-FILMS [J].
HARADA, K ;
NAKANISHI, H ;
ITOZAKI, H ;
YAZU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (05) :934-938
[6]   Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy [J].
Hong, M ;
Passlack, M ;
Mannaerts, JP ;
Kwo, J ;
Chu, SNG ;
Moriya, N ;
Hou, SY ;
Fratello, VJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2297-2300
[7]   Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation [J].
Hong, M ;
Kwo, J ;
Kortan, AR ;
Mannaerts, JP ;
Sergent, AM .
SCIENCE, 1999, 283 (5409) :1897-1900
[8]   Thermodynamic stability of binary oxides in contact with silicon [J].
Hubbard, KJ ;
Schlom, DG .
JOURNAL OF MATERIALS RESEARCH, 1996, 11 (11) :2757-2776
[9]  
KIZILYALLI IC, 1998, VLSI S, P216
[10]   HIGH-RESOLUTION X-RAY-SCATTERING STUDY OF THE NEMATIC-SMECTIC A-REENTRANT NEMATIC TRANSITIONS IN 8OCB-6OCB MIXTURES [J].
KORTAN, AR ;
KANEL, HV ;
BIRGENEAU, RJ ;
LITSTER, JD .
PHYSICAL REVIEW LETTERS, 1981, 47 (17) :1206-1209