Preparation and growth mechanism of β-Si3N4 rod-like crystals by combustion synthesis

被引：24

作者：

Chen, DY ^{[1
]}

Zhang, BL ^{[1
]}

Zhuang, HR ^{[1
]}

Li, WL ^{[1
]}

Xu, SY ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

来源：

MATERIALS LETTERS | 2002年 / 57卷 / 02期

关键词：

combustion synthesis; beta-Si3N4; rod-like crystal; growth mechanism;

D O I：

10.1016/S0167-577X(02)00799-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents the preparation of beta-Si3N4 rod-like crystals that have an average aspect ratio of similar to10 by combustion synthesis of the mixture of Si, alpha-Si3N4 and Y2O3 under 5 MPa nitrogen pressure. By using a quenching device, the growth morphology Of beta-Si3N4 rod-like crystals was observed and it is concluded that the growth mechanisms result from the synergy of VLS (vapor-liquid-solid) and VS (vapor-solid). (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：399 / 402

页数：4

共 9 条

[1] MICROSTRUCTURAL DESIGN OF TOUGHENED CERAMICS
BECHER, PF
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1991, 74 (02) : 255 - 269
[2] GRESKOVICH C, 1977, J AM CERAM SOC, V60, P170
[3] MICROSTRUCTURE CONTROL OF SILICON-NITRIDE BY SEEDING WITH RODLIKE BETA-SILICON NITRIDE PARTICLES
HIRAO, K
NAGAOKA, T
BRITO, ME
KANZAKI, S
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (07) : 1857 - 1862
[4] MICROSTRUCTURE CHARACTERIZATION OF GAS-PRESSURE-SINTERED BETA-SILICON NITRIDE CONTAINING LARGE BETA-SILICON NITRIDE SEEDS
HIROSAKI, N
AKIMUNE, Y
MITOMO, M
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (04) : 1093 - 1097
[5] HOFFMANN MJ, 1993, MAT RES S C, V287, P3
[6] IEVITT AP, 1970, WHISKER TECHNOLOGY
[7] Merzhanov A.G., 1990, Combustion and Plasma Synthesis of High-Temperature Materials
[8] Orientation-dependent properties of silicon nitride with aligned reinforcing grains
Park, DS
Choi, MJ
Roh, TW
Kim, HD
Han, BD
[J]. JOURNAL OF MATERIALS RESEARCH, 2000, 15 (01) : 130 - 135
[9] Sajgalik P., 1989, Journal of the European Ceramic Society, V5, P321, DOI 10.1016/0955-2219(89)90027-7

← 1 →