1.3-μm AlGaInAs-InP buried-heterostructure lasers with mode profile converter

被引：15

作者：

Takemasa, K ^{[1
]}

Kubota, M ^{[1
]}

Wada, H ^{[1
]}

机构：

[1] Oki Elect Ind Co Ltd, Res & Dev Grp, Optoelect Labs, Tokyo 1938550, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 05期

关键词：

AlGaInAs; buried-heterostructure; mode profile converter; selective area growth; semiconductor lasers; semiconductor quantum wells;

D O I：

10.1109/68.841256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaInAs buried-heterostrucutre (BH) lasers with a mode profile converter (MPC) have been successfully fabricated for the first time. The thickness of the multiple-quantum-well (MQW) waveguide was vertically tapered by selective area growth (SAG), The threshold current I-th was 14.6 mA with a 600-mu m-long cavity and a high-reflective-coated rear facet. The full-width at half-maximum of the far-field pattern in the perpendicular and horizontal directions were 9.2 degrees and 12.6 degrees, respectively, The optical coupling loss between lasers with MPC and a single-mode fiber was 3.0 dB when the distance between the laser and fiber was 20 mu m.

引用

页码：471 / 473

页数：3

共 50 条

[21] 1.3-μm AlGaInAs Multiple-Quantum-Well Semi-insulating Buried-Heterostructure Distributed-Feedback Lasers for High-Speed Direct Modulation
Otsubo, Koji
Matsuda, Manabu
Takada, Kan
Okumura, Shigekazu
Ekawa, Mitsuru
Tanaka, Hiromasa
Ide, Satoshi
Mori, Kazuyuki
Yamamoto, Tsuyoshi
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2009, 15 (03) : 687 - 693
[22] Highly Stable 1.3-μm-Wavelength Lasers With p- and n-InP Buried Heterostructure
Takeshita, Tatsuya
Ito, Tsuyoshi
Sugo, Mitsuru
Kato, Kazutoshi
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (03) : 576 - 581
[23] 1.3-μm AlGaInAs strain compensated MQW-buried-heterostructure lasers for uncooled 10-Gb/s operation
Nakamura, T
Okuda, T
Kobayashi, R
Muroya, Y
Tsuruoka, K
Ohsawa, Y
Tsukuda, T
Ishikawa, S
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2005, 11 (01) : 141 - 148
[24] Well-thickness dependence of high-temperature characteristics in 1.3-μm AlGaInAs-InP strained-multiple-quantum-well lasers
Ishikawa, T
Higashi, T
Uchida, T
Yamamoto, T
Fujii, T
Shoji, H
Kobayashi, M
Soda, H
IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (12) : 1703 - 1705
[25] Buried Heterostructure InAs/InP Quantum Dash Lasers at 1.3 μm
Calo, Cosimo
Micha, Daniel
Vaissiere, Nicolas
Martin, Florence
de Castro, Gustavo Afonso
Cruz, Celia
Mijovic, Igor
Mekhazni, Karim
Shen, Alexandre
Pommereau, Frederic
Delorme, Olivier
Wilk, Arnaud
2024 24TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, ICTON 2024, 2024,
[26] A Novel Investigation on Using Strain in Barriers of 1.3 μm AlGaInAs-InP Uncooled Multiple Quantum Well Lasers
Vahid BahramiYekta
Hassan Kaatuzian
Communications in Theoretical Physics, 2010, 54 (09) : 529 - 535
[27] A Novel Investigation on Using Strain in Barriers of 1.3 μm AlGaInAs-InP Uncooled Multiple Quantum Well Lasers
Yekta, Vahid Bahrami
Kaatuzian, Hassan
COMMUNICATIONS IN THEORETICAL PHYSICS, 2010, 54 (03) : 529 - 535
[28] Design improvement using strain in barriers of 1.3 mu m AlGaInAs-InP multiple quantum well lasers
Kaatuzian, Hassan
Yekta, Vahid Bahrami
NUSOD 2009: 9TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, PROCEEDINGS, 2009, : 95 - 96
[29] RELIABILITY OF INGAASP/INP BURIED HETEROSTRUCTURE 1.3-MU-M LASERS
MIZUISHI, K
SAWAI, M
TODOROKI, S
TSUJI, S
HIRAO, M
NAKAMURA, M
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) : 1294 - 1301
[30] 1.3-μm-Wavelength AlGaInAs Multiple-Quantum-Well Semi-Insulating Buried-Heterostructure Distributed-Reflector Laser Arrays on Semi-Insulating InP Substrate
Matsuda, Manabu
Uetake, Ayahito
Simoyama, Takasi
Okumura, Shigekazu
Takabayashi, Kazumasa
Ekawa, Mitsuru
Yamamoto, Tsuyoshi
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2015, 21 (06) : 241 - 247

← 1 2 3 4 5 →