Antireflective subwavelength structures at a wavelength of 441.6 nm for phase masks of near field lithography

With the development of micro- & nanofabrication technology, micro- & nanostructures have been widely used in many fields, including spectroscopy, coding, sensor, subwavelength element, etc. With phase masks realized by a combination of electron beam lithography (EBL), near field lithography (NFH) has great potential to fabricate versatile nanostructures, because it combines the advantages of both lithographic methods. Currently, subwavelength structures attract much attention due to their various functions, such as antireflection, polarization beam splitter and filter. In this presentation, aiming at reducing the interface reflection of a fused silica mask of NFH at a wavelength of 441.6 nm and incidence angles of either 0 degrees or 32 degrees. First, we will compare the difference of antireflection property of one-dimensional (1D) and two-dimensional (2D) subwavelength structures with line density of 3600 lines/ mm by simulation. Then, the optimized 1D and 2D subwavelength structures with 3600 lines/ mm will be fabricated by using EBL-NFH method. Finally, the antireflection property of these 1D and 2D subwavelength structures will be characterized at the wavelength of 441.6 nm.