DETRIMENTAL IMPACT OF TECHNOLOGICAL PROCESSES ON BTI RELIABILITY OF ADVANCED HIGH-K/METAL GATE STACKS

被引：15

作者：

Garros, X. ^{[1
]}

Casse, M. ^{[1
]}

Fenouillet-Beranger, C. ^{[2
]}

Reimbold, G. ^{[1
]}

Martin, F. ^{[1
]}

Gaumer, C. ^{[1
]}

Wiemer, C. ^{[3
]}

Perego, M. ^{[3
]}

Boulanger, F. ^{[1
]}

机构：

[1] CEA Leti, 17 Ave Martyrs, F-38054 Grenoble, France

[2] STMicroelect, F-38926 Crolles, France

[3] CNR INFM, Lab Nazionale MDM, I-200041 Agrate Brianza, Italy

来源：

2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2 | 2009年

关键词：

METAL GATE; HFO2; SILICON; STATES;

D O I：

10.1109/IRPS.2009.5173279

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A systematic study of mobility performances and Bias Temperature Instability (BTI) reliability was done on a large variety of advanced dielectric stacks. We clearly demonstrate that mobility performances and NBTI reliability are strongly correlated and that they are affected by the diffusion of nitrogen species N at the Si interface. Reducing the metal gate thickness favors the reduction of mobility degradations and NBTI, but, also strongly enhances PBTI, due to a complex set of reactions in the gate oxide. An optimum gate thickness must be found to obtain an acceptable trade off between device performance and reliability requirements.

引用

页码：362 / +

页数：2

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