DETRIMENTAL IMPACT OF TECHNOLOGICAL PROCESSES ON BTI RELIABILITY OF ADVANCED HIGH-K/METAL GATE STACKS

被引：14
作者：
Garros, X. [1 ]
Casse, M. [1 ]
Fenouillet-Beranger, C. [2 ]
Reimbold, G. [1 ]
Martin, F. [1 ]
Gaumer, C. [1 ]
Wiemer, C. [3 ]
Perego, M. [3 ]
Boulanger, F. [1 ]
机构：
[1] CEA Leti, 17 Ave Martyrs, F-38054 Grenoble, France
[2] STMicroelect, F-38926 Crolles, France
[3] CNR INFM, Lab Nazionale MDM, I-200041 Agrate Brianza, Italy
来源：
2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2 | 2009年
关键词：
METAL GATE; HFO2; SILICON; STATES;
D O I：
10.1109/IRPS.2009.5173279
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
A systematic study of mobility performances and Bias Temperature Instability (BTI) reliability was done on a large variety of advanced dielectric stacks. We clearly demonstrate that mobility performances and NBTI reliability are strongly correlated and that they are affected by the diffusion of nitrogen species N at the Si interface. Reducing the metal gate thickness favors the reduction of mobility degradations and NBTI, but, also strongly enhances PBTI, due to a complex set of reactions in the gate oxide. An optimum gate thickness must be found to obtain an acceptable trade off between device performance and reliability requirements.
引用
收藏
页码：362 / +
页数：2
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