共 10 条
[2]
BUTTS J, 2000, P 33 ANN IEEE INT S, P223
[3]
0.18um dual Vt MOSFET process and energy-delay measurement
[J].
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996,
1996,
:851-854
[4]
DUARTE DE, 2002, THESIS PENN STATE U
[5]
HU C, 1996, GATE OXIDE SCALING L, P319
[6]
*INT CORP, INT ANN BREAKTHR CHI
[7]
MCFARLAND G, 1997, THESIS STANFORD U
[8]
Rabaey J. M., 2008, DIGITAL INTEGRATED C
[9]
SYLVESTER D, P 38 DAC, P3
[10]
Viswanath R., 2000, Intel Technology Journal, P1