Nanoscale voltage tunable tunnel rectifier by gold nanostructures embedded in SiO2

被引：15
作者：
Ruffino, F.
Grimaldi, M. G.
Giannazzo, F.
Roccaforte, F.
Raineri, V.
机构：
[1] Univ Catania, CNR, Ist Nazl Fis Nucl, MATIS, I-95123 Catania, Italy
[2] CNR, IMM, I-95121 Catania, Italy
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 26期
关键词：
COULOMB STAIRCASE; ELECTRON;
D O I：
10.1063/1.2424433
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Conductive-atomic force microscopy is used to electrically characterize a nanometric metal-SiO2-Si (n(+)) system with Au nanocluster inclusions in SiO2. The system shows a marked rectifying behavior at room temperature with a threshold voltage function of the cluster size. This behavior is interpreted crossing physical considerations on metal-oxide-semiconductor structure and on double barrier tunnel junction device. The system fabricated and analyzed is proposed as a possible basic component for nanoelectronic circuits working at room temperature. (c) 2006 American Institute of Physics.
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页数：3
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