Analytical model for ArF photoresist shrinkage under scanning electron microscopy inspection

被引:9
作者
Ayal, Guy [1 ]
Andelman, David [1 ]
Cohen, Yachin [2 ]
机构
[1] Tel Aviv Univ, Raymond & Beverly Sackler Sch Phys & Astron, IL-69978 Tel Aviv, Israel
[2] Technion Israel Inst Technol, Wolfson Dept Chem Engn, IL-32000 Technion, Haifa, Israel
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 04期
基金
以色列科学基金会;
关键词
annealing; electron beam effects; photoresists; polymers; scanning electron microscopy; ultraviolet lithography; POLY(METHYL METHACRYLATE); GLASSY-POLYMERS; THERMAL HISTORY; DENSITY FLUCTUATION; BEAM LITHOGRAPHY; SEM MEASUREMENT; VOLUME; RELAXATION; PRESSURE; SYSTEM;
D O I
10.1116/1.3167364
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Linewidth slimming is a phenomenon occurring specifically in photolithography of 193 nm wavelength (ArF) radiation. Photoresists for this wavelength appear to lose volume when exposed to electron-beam radiation, as when scanned in scanning electron microscopy for critical dimension (linewidth) measurement. This work is an attempt to understand this "shrinkage" from a polymer physics point of view. More specifically, the authors try to check the applicability of free volume theory in polymer systems by calculating some relevant physical properties, assuming that the exposure to e-beam creates an external hardened shell for the material bulk, and continued exposure will deliver heat into the polymer enclosed in a confined space. The authors' main conclusion is that the free volume loss (annealing) shows qualitative resemblance to experiment, but this effect exclusively is not a sufficient quantitative explanation for the observed shrinkage. A possible explanation for this discrepancy is that their model is limited due to unknown material parameters, or that the annealing is coupled with other effects such as "wringing" solvent out.
引用
收藏
页码:1976 / 1983
页数:8
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