Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

被引：5

作者：

Malin, T. V. ^{[1
]}

Milakhin, D. S. ^{[1
]}

Aleksandrov, I. A. ^{[1
]}

Zemlyakov, V. E. ^{[2
]}

Egorkin, V. I. ^{[2
]}

Zaitsev, A. A. ^{[2
]}

Protasov, D. Yu. ^{[1
,3
]}

Kozhukhov, A. S. ^{[1
]}

Ber, B. Ya. ^{[4
]}

Kazantsev, D. Yu. ^{[4
]}

Mansurov, V. G. ^{[1
]}

Zhuravlev, K. S. ^{[1
,5
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Natl Res Univ Elect Technol MIET, Moscow 124498, Russia

[3] Novosibirsk State Tech Univ, Novosibirsk 630087, Russia

[4] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[5] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2019年 / 45卷 / 08期

关键词：

GaN; intrinsic point defects; background impurities; AlGaN; high-electron-mobility transistor; NH3-MBE; SAPPHIRE; GROWTH; CARBON;

D O I：

10.1134/S1063785019080108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using calculations of the background impurity and point defect concentrations at different ratios of the gallium and ammonia fluxes.

引用

页码：761 / 764

页数：4

共 11 条

[1] Fe doping for making resistive GaN layers with low dislocation density;: consequence on HEMTs [J].

Bougrioua, Z ;

Azize, M ;

Jimenez, A ;

Braña, AF ;

Lorenzini, P ;

Beaumont, B ;

Muñoz, E ;

Gibart, P .

Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07) :2424-2428

[2]

Caliebe M., 2016, Annual Report, P23

[3] Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices [J].

Gamarra, Piero ;

Lacam, Cedric ;

Tordjman, Maurice ;

Splettstoesser, Joerg ;

Schauwecker, Bernd ;

di Forte-Poisson, Marie-Antoinette .

JOURNAL OF CRYSTAL GROWTH, 2015, 414 :232-236

[4] Optimized norm-conserving Vanderbilt pseudopotentials [J].

Hamann, D. R. .

PHYSICAL REVIEW B, 2013, 88 (08)

[5] Study of GaN doping with carbon from propane in a wide range of MOVPE conditions [J].

Lundin, W. V. ;

Sakharov, A. V. ;

Zavarin, E. E. ;

Kazantsev, D. Yu. ;

Ber, B. Ya. ;

Yagovkina, M. A. ;

Brunkov, P. N. ;

Tsatsulnikov, A. F. .

JOURNAL OF CRYSTAL GROWTH, 2016, 449 :108-113

[6] Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers [J].

Malin, T. V. ;

Milakhin, D. S. ;

Mansurov, V. G. ;

Galitsyn, Yu. G. ;

Kozhuhov, A. S. ;

Ratnikov, V. V. ;

Smirnov, A. N. ;

Davydov, V. Yu. ;

Zhuravlev, K. S. .

SEMICONDUCTORS, 2018, 52 (06) :789-796

[7]

Perdew JP, 1996, PHYS REV LETT, V77, P3865, DOI 10.1103/PhysRevLett.77.3865

[8] Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD [J].

Rudzinski, M. ;

Desmaris, V. ;

van Hal, P. A. ;

Weyher, J. L. ;

Hageman, P. R. ;

Dynefors, K. ;

Rodle, T. C. ;

Jos, H. F. F. ;

Zirath, H. ;

Larsen, P. K. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06) :2231-2236

[9] Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN [J].

Schubert, Felix ;

Wirth, Steffen ;

Zimmermann, Friederike ;

Heitmann, Johannes ;

Mikolajick, Thomas ;

Schmult, Stefan .

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2016, 17 (01) :239-243

[10] First-principles calculations for defects and impurities: Applications to III-nitrides [J].

Van de Walle, CG ;

Neugebauer, J .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (08) :3851-3879

← 1 2 →