In situ band gap engineering of carbon nanotubes

被引：267

作者：

Crespi, VH

Cohen, ML

Rubio, A

机构：

[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

[3] UNIV VALLADOLID,DEPT FIS TEOR,E-47011 VALLADOLID,SPAIN

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.79.2093

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Bond rotation defects close the gap in large-gap nanotubes, open the gap in small-gap nanotubes, and increase the density of states in metallic nanotubes. Not only are these defects likely to be present in as-grown nanotubes, but they could be introduced locally into intact nanotubes, thereby opening a new road towards device applications.

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页码：2093 / 2096

页数：4

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