Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition

被引：48
|
作者：
Zhao, D. G.
Liu, Z. S.
Zhu, J. J.
Zhang, S. M.
Jiang, D. S.
Yang, Hui
Liang, J. W.
Li, X. Y.
Gong, H. M.
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2006年 / 253卷 / 05期
关键词：
Al incorporation; MOCVD; AlGaN;
D O I：
10.1016/j.apsusc.2006.04.062
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition is investigated. With the increase of trimethylalluminum (TMAl) flux, the crystal quality becomes worse, and the epilayer surface becomes rougher. An interesting phenomenon is that the growth rate of AlGaN decrease with increasing TMAl flux, which is opposite to the AlN growth rate dependence on the TMAl flux. All these effects are attributed to the different properties of At atoms due to the higher bond strength of Al-N compared with Ga-N, which lead to lower surface mobility and stronger competitive ability of Al atoms during the growth. The enhancement of the surface mobility of Al is especially important for improving the quality of AlGaN. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：2452 / 2455
页数：4
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