Thin films deposition in RF generated plasma by reactive pulsed laser ablation

被引：19

作者：

Giardini, A ^{[1
]}

Marotta, V ^{[1
]}

Morone, A ^{[1
]}

Orlando, S ^{[1
]}

Parisi, GP ^{[1
]}

机构：

[1] CNR, IMS, Tito, PZ, Italy

来源：

APPLIED SURFACE SCIENCE | 2002年 / 197卷

关键词：

reactive pulsed laser deposition; RF plasma; oxides; thin films;

D O I：

10.1016/S0169-4332(02)00395-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Metal oxide thin films have been deposited on Si(1 0 0) substrates by reactive pulsed laser ablation of metallic target-titanium, tungsten-in the presence of a 13.56 MHz radio frequency (RF) plasma, 10 Pa static atmosphere of O-2, using a doubled frequency Nd:YAG laser. The gaseous species were collected on Si(1 0 0) substrates positioned in front of the target on a heatable holder, up to. 1000 K. The deposited thin films were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The comparison between conventional pulsed laser deposition (PLD) and the RF plasma-assisted PLD showed the influence of the plasma on the surface roughness, and a better adhesion to the substrates by the plasma-aided thin films. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：338 / 342

页数：5

共 14 条

[1] NO2 sensitivity of WO3 thin film obtained by high vacuum thermal evaporation [J].