Excitation of hypersonic acoustic waves in diamond-based piezoelectric layered structure on the microwave frequencies up to 20 GHz

被引:22
|
作者
Sorokin, B. P. [1 ,2 ]
Kvashnin, G. M. [1 ]
Novoselov, A. S. [1 ,2 ]
Bormashov, V. S. [1 ]
Golovanov, A. V. [1 ]
Burkov, S. I. [3 ]
Blank, V. D. [1 ,2 ]
机构
[1] Technol Inst Superhard & Novel Carbon Mat, Troitsk 108840, Russia
[2] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Russia
[3] Siberian Fed Univ, Krasnoyarsk 660041, Russia
基金
俄罗斯科学基金会;
关键词
Diamond; Piezoelectric layered structure; HBAR; Aluminum nitride; Quality factor; Quality parameter; UHF acoustic attenuation; RESONATORS; ATTENUATION; CRYSTAL;
D O I
10.1016/j.ultras.2017.01.014
中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
First ultrahigh frequency (UHF) investigation of quality factor Q for the piezoelectric layered structure << Al/(001)AlN/Mo/(100) diamond has been executed in a broad frequency band from 1 up to 20 GHz. The record-breaking Q.f quality parameter up to 2.7 . 10(14)Hz has been obtained close to 20 GHz. Frequency dependence of the form factor m correlated with quality factor has been analyzed by means of computer simulation, and non-monotonic frequency dependence can be explained by proper features of thin-film piezoelectric transducer (TFPT). Excluding the minimal Q magnitudes measured at the frequency points associated with minimal TFPT effectiveness, one can prove a rule of Of similar to f observed for diamond on the frequencies above 1 GHz and defined by Landau-Rumer's acoustic attenuation mechanism. Synthetic IIa-type diamond single crystal as a substrate material for High-overtone Bulk Acoustic Resonator (HBAR) possesses some excellent acoustic properties in a wide microwave band and can be successfully applied for design of acoustoelectronic devices, especially the ones operating at a far UHF band. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:162 / 165
页数:4
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