Spectroscopic measurement of spin-dependent resonant tunneling through a 3D disorder:: The case of MnAs/GaAs/MnAs junctions

被引:26
作者
Garcia, V.
Jaffres, H.
George, J. -M.
Marangolo, M.
Eddrief, M.
Etgens, V. H.
机构
[1] Univ Paris 06, INSP, Inst NanoSci Paris, Univ Paris 07,CNRS,UMR 7588, F-75015 Paris, France
[2] Univ Paris 11, F-91405 Orsay, France
[3] CNRS Thales, Unite Mixte Phys, F-91767 Palaiseau, France
关键词
D O I
10.1103/PhysRevLett.97.246802
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We propose an analytical model of spin-dependent resonant tunneling through a 3D assembly of localized states (spread out in energy and in space) in a barrier. An inhomogeneous distribution of localized states leads to resonant tunneling magnetoresistance inversion and asymmetric bias dependence as evidenced with a set of experiments with MnAs/GaAs(7-10 nm)/MnAs tunnel junctions. One of the key parameters of our theory is a dimensionless critical exponent beta scaling the typical extension of the localized states over the characteristic length scale of the spatial distribution function. Furthermore, we demonstrate, through experiments with localized states introduced preferentially in the middle of the barrier, the influence of an homogeneous distribution on the spin-dependent transport properties.
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页数:4
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