Preparation of CuInS2 Thin Films by One-Step Electrodeposition

被引:4
|
作者
Li Juan [1 ]
Mo Xiao-Liang [1 ]
Sun Da-Lin [1 ]
Chen Guo-Rong [1 ]
机构
[1] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
关键词
Solar cell; CuInS2; One-step electrodeposition; Deposition potential; Annealing temperature; SOLAR-ENERGY CONVERSION; CELLS; DEPOSITION; CU; EVAPORATION; GROWTH; ILGAR; GAP;
D O I
10.3866/PKU.WHXB20091125
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
I-III-VI2 ternary chalcopyrite copper indium disulfide (CuInS2) films were prepared by one-step electrodeposition technique on molybdenum substrates. The structure and morphology of the samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The effects of deposition potential, annealing temperature, pH, and solution concentration on the formation of the electrodeposited thin films were investigated. The prepared CuInS2 thin films were found to be compact and uniform with grain sizes of 1-2 mu m. Their optical property was characterized by UV-Vis spectrophotometry and the bandgap value was calculated to be 1.41 eV.
引用
收藏
页码:2445 / 2449
页数:5
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