Improvement of partial shading resilience of PV array though modified bypass arrangement

被引:30
作者
Ghosh, Santosh [1 ]
Yadav, Vinod Kumar [2 ]
Mukherjee, Vivekananda [3 ]
机构
[1] Kirloskar Bros Ltd, Corp R&D Dept, Pune 411045, Maharashtra, India
[2] Delhi Technol Univ, Dept Elect Engn, Delhi 110042, India
[3] Indian Inst Technol, Indian Sch Mines, Dept Elect Engn, Dhanbad, Bihar, India
关键词
Bypass circuit; Hot spot; Mismatch power loss; Partial shading; Reliability; Photovoltaic; SILICON SOLAR-CELLS; HOT-SPOT; PHOTOVOLTAIC ARRAY; POWER ENHANCEMENT; RELIABILITY; PERFORMANCE; TOPOLOGIES; MITIGATION; BREAKDOWN; CIRCUIT;
D O I
10.1016/j.renene.2019.05.062
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Generation of hot spot, due to partial shading and other mismatch conditions, is associated with photovoltaic (PV) systems since its very early applications in satellites, but a simple, economic and effective solution is still unavailable. Conventional hot spot mitigation technique, using a bypass diode (BPD) across each sub-panel, reduces the reverse bias voltage only up to -12 V to -19V across the shaded cell, which matches exactly with the voltage range at which avalanche breakdown of PV cells occur. Reverse breakdown of an acidic texturized PV cell occurs merely at -13 V and between -15 V and -20 V for alkaline texturized ones. Hence, the standard BPD based circuit is not effective enough in preventing reverse breakdown of PV cells and hot spot generation. In this paper, a modified bypass circuit is proposed which successfully strikes a balance between the increase in reliability through reduction of hot spot temperature and increase in complexity of bypass circuit. The experimental study and simulation reveal that the proposed bypass circuit effectively reduced hotspot temperature of the obscure cell below average temperature of the module, without increasing the power loss, system complexity and cost thereof, substantially. (C) 2019 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1079 / 1093
页数:15
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