Imprint and fatigue properties of Pt/Pb(Zr0.4Ti0.6)O3/Pt capacitor

被引:3
|
作者
Jia, Ze [1 ]
Liu, Tian-zhi [1 ]
Hu, Hong [1 ]
Ren, Tian-ling [1 ]
Zhang, Zhi-gang [1 ]
Xie, Dan [1 ]
Liu, Li-tian [1 ]
机构
[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China
关键词
D O I
10.1080/10584580601085677
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Imprint and fatigue properties of Pb(Zr0.4Ti0.6)O-3 film prepared by sol-gel spin coating method in Pt/PZT/Pt capacitors are studied in this experiment. The voltage shift of hysteresis loops of Pt/PZT/Pt capacitors under DC voltage bias and fatigue stress are investigated at room temperature. It is shown that the absolute values of voltage shift of hysteresis loops decrease with the increasing positive bias voltage. Both the absolute and relative shifts of coercive voltage increase with the increase of fatigue stress. The properties above can be explained by the fort-nation and change of oxide layer at PZT/electrode interface under fatigue stress and correlative theories and models.
引用
收藏
页码:67 / 75
页数:9
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