Porous silicon as a sacrificial layer in production of silicon diaphragms by precision grinding

被引：0

作者：

Prochaska, A ^{[1
]}

Mitchell, SJN ^{[1
]}

Gamble, HS ^{[1
]}

机构：

[1] Queens Univ Belfast, Sch Elect Engn, Belfast BT7 1NN, Antrim, North Ireland

来源：

MATERIALS & PROCESS INTEGRATION FOR MEMS | 2002年 / 9卷

关键词：

porous silicon; precision grinding; silicon diaphragm;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This chapter discusses the use of porous silicon as a sacrificial supporting layer during silicon diaphragm formation by precision grinding. Unsupported silicon diaphragms formed by grinding exhibit post-grinding shape distortion dependent upon diaphragm thickness and diameter. Such distortion can be eliminated or strongly suppressed by use of a support during the grinding process. Use of porous silicon as in-situ support for 15 - 150 mum thick diaphragms is explained with emphasis on porous silicon properties, diaphragm thickness and fabrication processing steps such as oxidation.

引用

页码：27 / 50

页数：24

共 28 条

[1] STRUCTURAL STUDY OF POROUS SILICON [J].

BAYLISS, SC ;

HUTT, DA ;

ZHANG, Q ;

HARRIS, P ;

PHILLIPS, NJ ;

SMITH, A .

THIN SOLID FILMS, 1995, 255 (1-2) :128-131

[2] Porous silicon as a sacrificial material [J].

Bell, TE ;

Gennissen, PTJ ;

DeMunter, D ;

Kuhl, M .

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1996, 6 (04) :361-369

[3]

BERLOTTI M, 1995, THIN SOLID FILMS, V253, P152

[4] Fabrication of high aspect ratio silicon microstructures by anodic etching [J].

Charlton, MDB ;

Parker, GJ .

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1997, 7 (03) :155-158

[5] P-WELLS MADE OF POROUS SILICON FOR POWER DEVICES - DETERMINATION OF THE FORMATION STEPS [J].

DEHU, P ;

SENES, A ;

MISEREY, F .

THIN SOLID FILMS, 1995, 255 (1-2) :321-324

[6]

Den Hartog J.P., 1952, Advanced Strength of Materials

[7]

GAMBLE HS, 2000, Patent No. 0015500

[8] Raman microspectroscopy study of processing-induced phase transformations and residual stress in silicon [J].

Gogotsi, Y ;

Baek, C ;

Kirscht, F .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (10) :936-944

[9] Structuring of membrane sensors using sacrificial porous silicon [J].

Hedrich, F ;

Billat, S ;

Lang, W .

SENSORS AND ACTUATORS A-PHYSICAL, 2000, 84 (03) :315-323

[10] Frontside bulk silicon micromachining using porous-silicon technology [J].

Kaltsas, G ;

Nassiopoulou, AG .

SENSORS AND ACTUATORS A-PHYSICAL, 1998, 65 (2-3) :175-179

← 1 2 3 →