Pulsed laser crystallization and doping for thin film transistors

被引：11

作者：

Mei, P ^{[1
]}

Boyce, JB ^{[1
]}

Lu, JP ^{[1
]}

Ho, J ^{[1
]}

Fulks, RT ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷

关键词：

D O I：

10.1016/S0022-3093(99)00933-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Pulsed excimer-laser processing of amorphous silicon on non-crystalline substrates allows the creation of new materials and devices. In this paper, we review (I) fabrication of polysilicon thin film transistors (TFTs) on glass substrates, (2) integration of polysilicon and amorphous silicon devices on the same glass substrate and (3) formation of self-aligned contacts for amorphous silicon thin-film transistors via laser doping. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1252 / 1259

页数：8

共 26 条

[1] POLYSILICON THIN-FILM TRANSISTORS WITH UNIFORM PERFORMANCE FABRICATED BY EXCIMER LASER ANNEALING [J].

ASAI, I ;

KATO, N ;

FUSE, M ;

HAMANO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1B) :474-481

[2]

Boyce JB, 1996, MATER RES SOC SYMP P, V403, P305

[3]

Boyce JB, 1998, PHYS STATUS SOLIDI A, V166, P729, DOI 10.1002/(SICI)1521-396X(199804)166:2<729::AID-PSSA729>3.0.CO

[4]

2-1

[5]

BROTHERTON SD, 1994, SOLID STATE PHENOM, V37, P299

[6] INSITU DOPING OF SILICON USING THE GAS IMMERSION LASER DOPING (GILD) PROCESS [J].

CAREY, PG ;

SIGMON, TW .

APPLIED SURFACE SCIENCE, 1989, 43 :325-332

[7] OPTICAL CHARACTERIZATION OF AMORPHOUS-SILICON HYDRIDE FILMS [J].

CODY, GD ;

WRONSKI, CR ;

ABELES, B ;

STEPHENS, RB ;

BROOKS, B .

SOLAR CELLS, 1980, 2 (03) :227-243

[8]

FLUXMAN SM, 1993, GEC-J RES, V11, P2

[9]

FORGARASSY E, 1993, APPL SURF SCI, V69, P231

[10] High-performance laser-processed polysilicon thin-film transistors [J].

Giust, GK ;

Sigmon, TW ;

Boyce, JB ;

Ho, J .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (02) :77-79

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