A Wideband 60 GHz Class-E/F2 Power Amplifier in 40nm CMOS

被引：0
|
作者：
Babaie, Masoud [1 ]
Staszewski, Robert Bogdan [1 ,2 ]
Galatro, Luca [1 ]
Spirito, Marco [1 ]
机构：
[1] Delft Univ Technol, NL-2600 AA Delft, Netherlands
[2] Univ Coll Dublin, Dublin, Ireland
来源：
PROCEEDINGS OF THE 2015 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC 2015) | 2015年
关键词：
Power amplifier; mm-wave; class-E/F-2; switched-mode; transformer; PA stability;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a fully integrated 60 GHz power amplifier in 40nm CMOS that reaches the highest reported product of power-added efficiency and bandwidth. It is achieved through low/moderate coupling-factor transformers in the preliminary stages and a proper second harmonic termination of the output stage, such that it can operate as a class-E/F-2 switched-mode PA at the saturation point. The three-stage PA delivers 17.9dBm saturated output power with 20% peak PAE. It demonstrates a bandwidth of 9.7 GHz with a peak gain of 21.6 dB.
引用
收藏
页码：215 / 218
页数：4
相关论文
共 50 条
  • [41] A 3.5-9.5 GHz Compact Digital Power Amplifier with 39.3% Peak PAE in 40nm CMOS Technology
    Qian, Huizhen Jenny
    Liang, Jian Orion
    Luo, Xun
    2015 IEEE International Wireless Symposium (IWS 2015), 2015,
  • [42] A 60 GHz power amplifier in 90nm CMOS technology
    Heydari, Babak
    Bohsali, Mounir
    Adabi, Ehsan
    Niknejad, Ali M.
    PROCEEDINGS OF THE IEEE 2007 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2007, : 769 - 772
  • [43] Improved design technique of a broadband Class-E power amplifier at 2GHz
    Qin, Y.
    Gao, S.
    Butterworth, P.
    Korolkiewicz, E.
    Sambell, A.
    35TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS, 2005, : 453 - 456
  • [44] 2.4 GHz Class-E power amplifier with transmissionline harmonic terminations
    Mury, T.
    Fusco, V. F.
    Cantu, H.
    IET MICROWAVES ANTENNAS & PROPAGATION, 2007, 1 (02) : 267 - 272
  • [45] A Wideband 28GHz Power Amplifier Supporting 8x100MHz Carrier Aggregation for 5G in 40nm CMOS
    Shakib, Sherif
    Elkholy, Mohamed
    Dunworth, Jeremy
    Aparin, Vladimir
    Entesari, Kamran
    2017 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), 2017, : 44 - 44
  • [46] A 6.0-GHz low noise amplifier and A 6.0-GHz class-E power amplifier
    Yang, Hsin-Chia
    Chen, Po-Yu
    Wang, Chuei-Tang
    EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS, 2007, : 1005 - 1008
  • [47] A Polar Modulated CMOS Class-E Amplifier with a Class-F Driver Stage
    Tsou, Wen-An
    Wuen, Wen-Shen
    Wen, Kuei-Ann
    2009 THIRD INTERNATIONAL SYMPOSIUM ON INTELLIGENT INFORMATION TECHNOLOGY APPLICATION, VOL 3, PROCEEDINGS, 2009, : 658 - 661
  • [48] A fully integrated class-E CMOS amplifier with a class-F driver stage
    Ho, CC
    Kuo, CW
    Hsiao, CC
    Chan, YJ
    2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2003, : 211 - 214
  • [49] A FULL X-BAND CMOS AMPLIFIER WITH WIDEBAND CLASS-E HARMONIC MATCHING
    Park, Seungwon
    Jeon, Sanggeun
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2015, 57 (03) : 645 - 649
  • [50] Study on a 0.13-μm CMOS Class-E 2.4 GHz Adjustable Power Amplifier for IoT Application
    Li, Jingxuan
    Wu, Yuming
    Lv, Xin
    2022 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT), 2022,
12345