A Wideband 60 GHz Class-E/F2 Power Amplifier in 40nm CMOS

被引：0
|
作者：
Babaie, Masoud [1 ]
Staszewski, Robert Bogdan [1 ,2 ]
Galatro, Luca [1 ]
Spirito, Marco [1 ]
机构：
[1] Delft Univ Technol, NL-2600 AA Delft, Netherlands
[2] Univ Coll Dublin, Dublin, Ireland
来源：
PROCEEDINGS OF THE 2015 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC 2015) | 2015年
关键词：
Power amplifier; mm-wave; class-E/F-2; switched-mode; transformer; PA stability;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a fully integrated 60 GHz power amplifier in 40nm CMOS that reaches the highest reported product of power-added efficiency and bandwidth. It is achieved through low/moderate coupling-factor transformers in the preliminary stages and a proper second harmonic termination of the output stage, such that it can operate as a class-E/F-2 switched-mode PA at the saturation point. The three-stage PA delivers 17.9dBm saturated output power with 20% peak PAE. It demonstrates a bandwidth of 9.7 GHz with a peak gain of 21.6 dB.
引用
收藏
页码：215 / 218
页数：4
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