A nanoindentation study of the mechanical properties of ZnO thin films on (0001) sapphire

被引:39
作者
Navamathavan, R. [1 ]
Kim, Kyoung-Kook
Hwang, Dae-Kue
Park, Seong-Ju
Hahn, Jun-Hee
Lee, Tae Geol
Kim, Gwang-Seok
机构
[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Nanophoton Semicond Lab, Kwangju 500712, South Korea
[2] Korea Res Inst Stand & Sci, Chem Metrol & Mat Evaluat Div, Taejon 305600, South Korea
关键词
epitaxial ZnO; Berkovich tip; mechanical properties;
D O I
10.1016/j.apsusc.2005.12.078
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The mechanical properties of epitaxial ZnO thin films grown on (0 0 0 1) sapphire substrate were investigated by nanoindentation with a Berkovich tip and compared with that of bulk ZnO single crystal. In all indents on ZnO film a single discontinuity ('pop-in') in the load versus indentation depth data was observed at a specific depth of between 13 and 16 nm. In bulk ZnO, however only 65% of indents showed pop-in event at a specific depth of between 12 and 20 nm. The mechanism responsible for the 'pop-in' event in the epitaxial ZnO thin films as well as in bulk ZnO was attributed to the sudden propagation of dislocations, which had been pinned down by pre-existing defects, along the pyramidal {1011} and basal {0 0 0 1} planes (cross slip). The elastic modulus and hardness of the epitaxial ZnO thin films were determined to be 154 5 and 8.7 +/- 0.2 GPa, respectively, at an indentation depth of 30 nm. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:464 / 467
页数:4
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