Highly transparent conductive ITO/Ag/ITO trilayer films deposited by RF sputtering at room temperature

被引：27

作者：

Ren, Ningyu ^{[1
]}

Zhu, Jun ^{[1
]}

Ban, Shiliang ^{[1
]}

机构：

[1] Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Univ Inner Mo, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China

来源：

AIP ADVANCES | 2017年 / 7卷 / 05期

基金：

中国国家自然科学基金;

关键词：

LIGHT-EMITTING-DIODES; THIN-FILMS; ELECTRICAL-PROPERTIES; MULTILAYER FILMS; SOLAR-CELLS; HIGH FIGURE; ZNO FILMS; ELECTRODES; NANOWIRE; MERIT;

D O I：

10.1063/1.4982919

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ITO/Ag/ITO (IAI) trilayer films were deposited on glass substrate by radio frequency magnetron sputtering at room temperature. A high optical transmittance over 94.25% at the wavelength of 550 nm and an average transmittance over the visual region of 88.04% were achieved. The calculated value of figure of merit (FOM) reaches 80.9 10(-3) Omega(-1) for IAI films with 15-nm-thick Ag interlayer. From the morphology and structural characterization, IAI films could show an excellent correlated electric and optical performance if Ag grains interconnect with each other on the bottom ITO layer. These results indicate that IAI trilayer films, which also exhibit lowsurface roughness, will be well used in optoelectronic devices. (C) 2017 Author(s).

引用

页数：7

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