Synthesis of copper doped Zinc oxide nanowires with enhanced ultraviolet photoresponse behavior

被引：5

作者：

Ghosh, S. P. ^{[1
]}

Das, K. C. ^{[1
]}

Tripathy, N. ^{[1
]}

Moharana, A. ^{[1
]}

Adhikari, A. ^{[1
]}

Bose, G. ^{[2
]}

Kim, D. H. ^{[3
]}

Lee, T. I. ^{[4
]}

Myoung, J. M. ^{[3
]}

Kar, J. P. ^{[1
]}

机构：

[1] Natl Inst Technol, Dept Phys & Astron, Rourkela 769008, India

[2] IFHE Univ, FST, Hyderabad 501203, Andhra Pradesh, India

[3] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[4] Gachon Univ, Dept Bionanotechnol, Gyeonggi Do, South Korea

来源：

NATIONAL CONFERENCE ON PROCESSING AND CHARACTERIZATION OF MATERIALS (NCPCM) | 2017年 / 178卷

基金：

新加坡国家研究基金会;

关键词：

Copper; Doped; Nanowire; Ultraviolet; Photodetection; Zinc Oxide; ZNO;

D O I：

10.1088/1757-899X/178/1/012021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work mainly focused on the synthesis of copper doped zinc oxide nanowires by hydrothermal method, their characterization and their ultraviolet (UV) light sensing response at room temperature. The structural and morphological characterization was carried out using X-ray diffraction and scanning electron microscopy. Enhanced ultraviolet (UV) photodetection property has been achieved for a dopant concentration of 2.5wt% and 5wt% showing UV photosensitivity values (photo-to-dark current ratio) of around 800 and 1800, respectively. This is an order of magnitude higher than the undoped ZnO nanowires. High photocurrent gain is attributed to the trapping of carriers under dark and detrapping them under UV illumination by Cu-related defects. Enhancement in photosensitivity indicates that Cu-doped ZnO nanowires are promising candidates for UV photodetection applications.

引用

页数：5

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