A New Description of Fast Charge-Trapping Effects in GaN FETs

被引：0
作者：
Bosi, G. [1 ]
Raffo, A. [1 ]
Vadala, V. [1 ]
Vannini, G. [1 ]
机构：
[1] Univ Ferrara, Dept Engn, I-44122 Ferrara, Italy
来源：
2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2015年
关键词：
Gallium nitride; nonlinear model; charge trapping;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
A nonlinear multi-bias model oriented to accurately predict the effects of charge-trapping in Gallium Nitride (GaN) HEMTs is proposed. As a case study, we considered a 0.25-mu m 8x75-mu m GaN HEMT. The model is identified by using CW low-frequency time-domain data and validated through high-frequency vector nonlinear measurements.
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页数：4
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